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inchange semiconductor product specification silicon npn power transistors BD239/a/b/c description ? ? with to-220c package ? complement to type bd240/a/b/c applications ? for medium power linear and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD239 55 BD239a 70 BD239b 90 v cbo collector-base voltage BD239c open emitter 115 v BD239 45 BD239a 60 BD239b 80 v ceo collector-emitter voltage BD239c open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 2 a i cm collector current-peak 4 a i b base current 0.6 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BD239/a/b/c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD239 45 BD239a 60 BD239b 80 v ceo(sus) collector-emitter sustaining voltage BD239c i c =30ma; i b =0 100 v v cesat collector-emitter saturation voltage i c =1 a;i b =0.2 a 0.7 v v be base-emitter on voltage i c =1a ; v ce =4v 1.3 v BD239/a v ce =30v; i b =0 i ceo collector cut-off current BD239b/c v ce =60v; i b =0 0.3 ma BD239 v ce =45v; v be =0 BD239a v ce =60v; v be =0 BD239b v ce =80v; v be =0 i ces collector cut-off current BD239c v ce =100v; v be =0 0.2 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =0.2a ; v ce =4v 40 h fe-2 dc current gain i c =1a ; v ce =4v 15
inchange semiconductor product specification 3 silicon npn power transistors BD239/a/b/c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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